Impacts of atomistic surface roughness on electronic transport in n-type and p-type MoS2 field-effect transistors

Abstract

We investigate the impacts of channel curvature induced by atomistic surface roughness on electronic-transport properties in monolayer transition-metal dichalcogenide field-effect transistors (FETs) through ab initio calculations. By focusing on the channel current, we demonstrate that the Ion current and Ion/Ioff ratio are both significantly suppressed in n-type and p-type MoS2 FETs when increasing the channel curvatures. We also evaluate the performance of CMOS inverters and demonstrate that the channel curvatures can dramatically reduce the inverter performance. These findings point to the fact underlining that surface engineering for channel roughness optimization at the atomic level is strongly required in MoS2-based devices.