Abstract
In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric field crowding effect at the corners of the source region which reflect in terms of high ON-current (Ion). The Ion of the proposed device is increased up to 10− 4 A/μm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (Von = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized.
Highlights
The steeper subthreshold slope devices are necessary to alter generation low power device application in the field of electronics
The SG-FC-Tunnel Field Effect Transistor (TFET) is simulated in a 2D-TCAD simulator using nonlocal B2BT, SRH, FLDMOB, auger, FERMI, and CONMOB models
The electric field (ELF) variation of proposed device along with different cut lines is illustrated in fig
Summary
The ambipolar behavior (high ambipolar current (Iamb ≈ 10−7 A/μm) ) and low Ion (≈ 10−6 A/μm) for which TFET can be realized by a small tunneling junction with limiting SCi region. To get the better of these leading limitations of TFET, many researchers investigated different structures and materials by using antithetic concepts and techniques [2,3,4,5]. In this simulation based work, a novel SG-FC-TFET has been investigated and optimized to obtain high Ion, suppressed Iamb, and minimum Von with the steeper sub threshold slope of Id − Vgs curve. The analog and radio frequency performance parameters were analyzed through the 2D-TCAD tool, to optimize the device performance for high frequency applications with low power consumption
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