Abstract
This paper discusses the impact of X-ray radiation on the hot-carrier reliability of the silicon-on-insulator (SOI) MOSFET. We examine sub-micron complimentary SOI MOSFETs in order to investigate the various factors influencing device characteristics. Samples on n-channel MOSFETs (fully-depleted inversion-channel devices) and p-channel MOSFETs (accumulation-mode devices) were fabricated using conventional photolithography in the 1990s, and they were subjected to continuous X-ray radiation in the range of 0.1J/cm2 to 5J/cm2 after fabrication. D. c. characteristics of as-irradiated devices and post-annealed devices and hot-carrier reliability of post-annealed devices were fully investigated.
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