Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET

Abstract

The favorable electrostatic potential and tunneling underneath the overall gate region, which prevents legitimate source to drain tunneling, controllability over the gate is assisted in vertical TFET configurations. An L-TFET (L-shaped Tunneling Field-Effect Transistor) has a larger tunneling length than a veritable TFET. As a consequence, the current in the on-state (Ion) has gotten better. The increased ambipolar current and low Ion/Ioff ratio of L-TFET will need to be tuned for low-power and high-frequency functionality. On the other hand, significantly worse switching performance and distortions may lead to a weak robust device. By establishing a high-k gate oxide-based drain underlap region with dual gate, this study is dedicated to ameliorating the Ion/Ioff by subverting ambipolar behavior. To investigate the impact of height of second gate (Hgate2) and work-function of this (WFgate2), EBD (Energy Band Diagram), electric field distribution in X and Y direction, potential and recombination rate are examined under various conditions. Which leads to enhanced DC/RF and linearity performance. Along with this, Current-Voltage characteristics, DC/RF, and linearity performance Figure of Merits (FOMs) also investigated the assessment of variation of Hgate2 and WFgate2, and it is optimized for the better suppression of Iambi (ambipolar current) with a steep slope in transfer characteristics. In addition to that, Current-voltage statistics (Ids − Vgs), DC/RF, and linearity efficiency FOMs were being used to assess the influence of changing the Hgate2 and WFgate2, which was modulated for greater Iambi suppression (ambipolar current) with improved SS and Vth for the proposed device.