Abstract
The impact of work function (ϕM) of metal gate in a step-FinFET on RF/analog and linearity parameters was studied using Sentaurus Technology Computer-Aided Design simulator. The impact of ϕM on RF/analog figure of merits like drain current (ID), transconductance (gm), output conductance (gd), gate capacitance (Cgg), transconductance generation factor (TGF = gm/ID), cutoff frequency (ft), gain (gm/gd), and gain transconductance frequency product was focused. Furthermore, the effect of ϕM on the linearity parameters gm2, gm3, VIP2, VIP3, IIP3, and 1 − dB compression point was also discussed. It was seen that improvement in RF/analog and linearity performance can be achieved by using a low-value metal gate work function (ϕM).
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