Abstract
In this paper, we present a numerical simulation study of the effects of two-photon absorption on soliton trapping occurring between two components decomposed from a soliton pulse. The two pulse components polarize along the polarization directions of the quasi-TE mode and quasi-TM mode in a silicon-on-insulator waveguide. The effects of free carriers generated by two-photon absorption are also investigated, leading to free-carrier absorption and free-carrier dispersion. The simulation image of the propagation of solitons is provided by solving the coupled nonlinear Schrödinger equation satisfied by the quasi-TE mode component and the quasi-TM mode component utilizing the split-step Fourier method with MATLAB. The simulation shows that two-photon absorption and free carriers will hinder the formation of soliton trapping. As the incident pulse power increases, the soliton trapping will occur, inspite of the presence of two-photon absorption and free carriers. The simulation also indicates that if the value of the free-carrier’s lifetime is comparable to the value of the pulse width, the formation of soliton trapping is susceptible to the lifetime of free carriers. With the incident pulse width increasing, soliton trapping forms between the mean peak of two polarization components, whereas it originally formed between the mean peak of TE mode and secondary peak of TM mode at small pulse width.
Published Version
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