Impact of Ti Content on Structural and Electrical Characteristics of High- $\kappa$ Yb2TiO5 $\alpha$ -InZnSnO Thin-Film Transistors

Abstract

In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high- ${\mathsf \kappa }$ Yb2TiO5 gate dielectrics for amorphous indium–zinc–tin-oxide ( $\alpha $ -IZTO) thin-film transistor (TFT) devices. The Yb2TiO5 $\alpha $ -IZTO TFT device treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobility of 29.8 cm2/Vs, high ION/IOFF current ratio of $2.7\times 10^{8}$ , and small subthreshold swing of 202 mV/decade.