Abstract
TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current ( $\boldsymbol{J}_{\mathbf{Csat}}$ ) using a 2D simulation is also presented with an appropriate correction.
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