Abstract
In this article the results of experimental investigations of resistivity, charge collection efficiency, mobility lifetime μ n ·τ n product and I-V curves dependencies on thermal treatment of Me-GaAs:Cr-Me X-ray sensors are presented. Experimental samples were the pad sensors with active area 0.1-0.25 cm2 and active layer thickness of 400-500 μm. The μ n ·τ n product was estimated using charge collection efficiency dependency on bias measured with the use of gammarays of 241 Am source. It was shown that thermal treatment in the temperature range of 200-500°C doesn’t lead to a sufficient degradation of sensor’s characteristics and can be used in array detectors processing.
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