Abstract
By statistically analyzing 28,800 cells of arrayed stacked gate transistors, for the first time, we examine the effectiveness of nitric oxide (NO) and nitrous oxide (N2O) nitridation in the suppression of the microscopic stress-induced leakage current (mSILC) observed in devices on the order of square microns in size. We have found that NO nitridation is more effective in suppressing the mSILC than N2O nitridation and is very promising for the reduction of bit failures. The difference between the SILC observed in devices on the order of square millimeters in size and the mSILC observed in devices on the order of square microns in size is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
