Abstract
Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave pulses. Here, using a parallel computing program for semiconductor multi-physics effects designed by ourselves, we studied the influence of the thickness of the I layer and the anode diameter of the PIN diode on the maximum temperature change curve of the PIN diode limiter. The damage threshold criterion in the numerical simulation was first studied by comparing experimental results with simulation results. Then, we determined the impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes.
Highlights
Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection
In this work, using the JEMS-CDS Device, a parallel computing program for semiconductor multi-physics effects, we studied the damage threshold criterion in numerical simulation through comparing experimental results and simulation results
To further verify the analytical model, the limiter PIN diodes damaged by microwave pulses were physically analyzed via dual beam focused ion beam (FIB) cross section analysis (FEI Helios 600)
Summary
A typical PIN limiter includes single or multistage PIN diodes. To eliminate the interferences from other factors except the I layer thickness and the anode diameter of the PIN diode, such as other PIN diodes and complex peripheral circuits, a single-stage limiter, whose structure is shown in Fig. 1, is chosen as the target of the study. To eliminate the interferences from other factors except the I layer thickness and the anode diameter of the PIN diode, such as other PIN diodes and complex peripheral circuits, a single-stage limiter, whose structure is shown, is chosen as the target of the study. The typical single PIN diode limiter consists of one PIN diode, two Direct Current (DC) block capacitors, and a parallel inductor. The inductance of the parallel inductor is 40 nH, the DC block capacitors are all 30 pF in this work and the PIN diodes are model CLA series manufactured by S kyworks[12]. The PIN diode mainly consists of a thick substrate and three layers named P +, I and N+ mounted on it
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