Abstract
Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends. However, PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of RF receiver systems. The damage processes and mechanisms in PIN limiters are undoubtedly important topics. Here, the damage accumulation process in PIN limiters induced by external microwave pulses is studied via the injection experiments. The relationship between the degree of damage (i.e., insertion loss) in the limiters and number of the injected pulses is reported. The maximum temperature criterion for burnout in PIN limiters is theoretically predicted and experimentally verified not accurate, and it is further observed that the insertion loss of the PIN diode limiter changes significantly only if more energy is injected into the limiter via microwave pulses.
Highlights
Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends
To protect sensitive components from damage due to external high-power microwave pulses, positive-intrinsic-negative (PIN) diodes are widely used as limiters in radio frequency (RF) receiver systems and communication front-ends[3,4,5]
PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of the RF receiver systems, the RF receivers would no longer receive signals in the typical manner[6,7]
Summary
Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends. PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of RF receiver systems. The damage accumulation process in PIN limiters induced by external microwave pulses is studied via the injection experiments. To protect sensitive components from damage due to external high-power microwave pulses, positive-intrinsic-negative (PIN) diodes are widely used as limiters in radio frequency (RF) receiver systems and communication front-ends[3,4,5]. Many theoretical, numerical simulation, and experimental studies have been conducted to analyze the damage effects of microwave pulses on the PIN diode limiters. Using measured scattering parameters (S-parameters), current-voltage (I-V) characteristics, and dual beam focused ion beam (FIB) analysis of the PIN diode limiters, we determined the damage accumulation mechanism in PIN diode limiters induced by these microwave pulses
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