Abstract
This work is aimed at studying the influence of the self-heating effect on the scalability of HEMTs from an experimental point of view. To accomplish that, we analyze the DC and microwave performance of devices having scaled gate widths. Our experimental results show that the DC transconductance does not scale linearly with the gate periphery under high power dissipation condition. The observed degradation of the transconductance in larger devices can be explained by a reduction of the average carrier velocity due to the occurrence of self-heating. Thermal phenomena even affect the RF small signal performance of the devices under test as they influence the DC operating point. Therefore, the RF transconductance and the forward transmission coefficient are degraded when the dissipated power increases so that all the self-generated heat cannot be completely removed.
Published Version
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