Abstract
The impact of the sample thickness and γ-irradiation dose on the magnitude of total and static radiation-induced optical effects in chalcogenide vitreous semiconductors is studied using the example of Ge-Sb-S alloys of the Ge23.5Sb11.8S64.7 chemical composition. It is established that, at comparable ratios between the doses of γ-irradiation (Φ = 3.0 and 7.72 MGy) and thicknesses of the samples (d = 1.0 and 1.7 mm), the dose change more essentially affects the occurrence of radiation-induced optical effects in the semiconductors examined.
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