Chapter 6 Radiation-induced effects in chalcogenide vitreous semiconductors

Abstract

This chapter describes the radiation-induced effects (RIEs) in chalcogenide vitreous semiconductors. In methodology of RIEs observation, chalcogenide vitreous semiconductors (ChVS) samples of various chemical compositions prepared from high-purity elemental constituents by direct synthesis in evacuated quartz ampoules using the standard rocking furnace technique followed by air quenching. The radiation-structural transformations were studied using differential Fourierspectroscopy technique in a long-wave infrared region. The observed radiation-structural transformations were associated with reflectivity changes, DR, in the main vibrational bands of the investigated ChVS samples. The RIEs can be produced in the bulk ChVS samples by high-energetic ionizing irradiation of different kinds, but γ-quanta irradiation by 60 Co radioisotope has a number of significant advantages over other methods. It is suggested that the investigated RIEs in ChVSs reveal themselves through related changes of their physical–chemical properties under high-energetic irradiation. It is concluded that in spite of their complicated nature, the RIEs possess remarkable features and have been in the sphere of special interest of many scientific groups. To thoroughly understand their essence, more precise microstructural research using the technical possibilities of new in situ and non-traditional experimental techniques, such as positron annihilation, and extended X-ray absorption fine structure must be carried out.