Abstract
The peculiarities of morphological evolution during GaAs(001) molecular beam epitaxy are studied by RHEED and AFM methods. A clear correlation is established between surface superstructure and morphological evolution. Thermodynamic conditions are experimentally determined which provide the most perfect GaAs(001) epilayer surface. For the (2 × 4) surface reconstruction growth conditions are established which give rise to surface roughening. A new technique is proposed and tested to significantly increase the efficacy of surface smoothening procedure under As flux.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
