Abstract
We have developed a Laser-Assisted Deposition (LAD) process for improving the crystalline quality of CIGS thin films and cell performance. The V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> , FF and conversion efficiency improved by the LAD process for all CIGS devices with different Ga content. In particular the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> improved remarkably for low Ga-content CIGS devices. In fact a high efficiency low-Ga CIGS thin film solar cell was achieved at substrate temperatures of 430 °C. The details of laser power and photon energy dependences of cell performance are also presented.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
