Abstract
Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog performance, which are to be critically analyzed. In the present paper, the analog performance, HCI degradation, and Linearity distortion of NJL-DGAA MOSFETs are investigated on temperatures ranging from 200K to 500K using a Sentaurus 3D device simulator. The parameters such as ON-current, OFF-current, DIBL, subthreshold swing (SS), transconductance, gate leakage current, high-order gm, VIP2, VIP3, IIP3, IMD3, and 1-dB compression point have been evaluated for the mentioned temperature range. The ON-current and DIBL are found to be increased by 17.2 % and 27.5 %, respectively, when the temperature increases from 200K to 500K. However, assessment of performance reveals that the NJL-DGAA devices offer superior analog performance with high-frequency applications even at higher temperature ranges.
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