Abstract
This paper demonstrates electrical degradation due to Hot Carrier Injection (HCI) stress for nLDMOS devices with different Large Angle Tilted Implantation Doping (LATID) techniques for p-body. It seems that optimization of the device with LATID angle for p-body in nLDMOS is important to achieve improved HCI performance and observed that HCI degradation is minimum for 300 LATID for p-body. We observed Si/SiO2 interface trap under various stress conditions, were evaluation based on our Sentaurus simulation, and we compare trapped charge density and distribution for various LATID angles and it was less for 300 tilt. Trap-related models were employed to perform Ron and Id,sat degradations during the HCI stress test. So nLDMOS device with 300 tilt angle for p-body shows better HCI performance compared to other LATID. Also our new proposed device structure shows less HCI degradations when compared with silicon data of HCI degradations for other nLDMOS structure.
Highlights
Lateral DMOS transistors are widely used as integrated high-voltage switches and drivers in mixed-signal integrated circuits
As we know hot-carrier injection (HCI) degradations is because of trapped charges into the oxide region of Si/Sio2 interface and HCI degradation will be more with more traps that occurs in oxide regions
When we analyse the results we can explain that our new nLDMOS structure shows very good HCI performance
Summary
Lateral DMOS transistors are widely used as integrated high-voltage switches and drivers in mixed-signal integrated circuits. High operational drain and gate biases make the LDMOS device vulnerable to the damage caused by hot-carrier injection (HCI), and the reliability characterization in STI based LDMOS devices have recently drawn much attention [2,3,4,5,6]. Very little is known on the hotcarrier injection effects in the rugged LDMOS device when it is operated in the high impact-ionization regime. Mechanism of this reliability issue was not well understood. Hot carrier will be generated when non-equilibrium energy distribution is reached and impact ionization will be triggered
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