Abstract
The zero temperature coefficient (ZTC) is investigated by the simple model and three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectangular gate geometries (CM), considering the same channel widths (W), gate areas (A <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> ) and bias condition (BC) technology. A simple model is used to study the behavior of the gate voltage at ZTC (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ZTC</inf> ) in the linear and the saturation region. The influence of the temperature mobility degradation on V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ZTC</inf> is analyzed for EM and CM devices. The V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ZTC</inf> changes in the temperature range investigated showed a temperature mobility degradation dependence and the both devices showed the same behavior. The analysis takes into account temperature dependence model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with 3D simulations results in spite of the simplification used for the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ZTC</inf> model as a function of temperature in the linear and the saturation region.
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