Abstract
In this paper, the influence of mechanical stress on double-gate p-MOSFET performance has been investigated, by means of the full-band version of our Monte Carlo simulator (MONACO). Compressive and tensile stresses in the case of biaxially- and uniaxially-strained 〈100〉 and 〈110〉-oriented channels have been studied. A tensile biaxial stress in plane (100) always decreases the gate delay and the lowest values are obtained for a 〈100〉-oriented channel. A compressive uniaxial stress along 〈110〉 (or tensile uniaxial stress along 〈−110〉) leads to an appreciable improvement of the gate delay in 〈110〉-oriented channel devices. Resulting performance meets quite well the specifications of the updated 2008 ITRS defined for LOP45 and LSTP40.
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