Abstract
The impact of shallow trench isolation (STI) on the statistical variability introduced by random discrete dopants and trapped interface charge is clarified for the first time using 3-D statistical numerical simulations. The possible influence of the STI on the p-n junction shape is also taken into account. The simulated test bed devices are contemporary 35-nm gate-length high-performance nMOSFETs typical for the 45-nm technology generation. In transistors with straight junction edges, the STI-related fringing effects increase the equivalent channel width, reducing the statistical variability. Changes in the junction shape in the STI vicinity can further reduce or increase the variability.
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