Impact of static magnetic fields on the radial line slot antenna plasma source

Abstract

The radial line slot antenna plasma source is used in semiconductor device fabrication. As is the case for all plasma sources, ever more strict uniformity control requirements are driven by the precision demands of new device technologies. Large volume diffusion plasmas, of which the radial line slot antenna source is one type, must overcome transport effects or diffusion modes that tend to “center peak” the plasma density near the wafer being processed. One way to resolve problematic transport effects is the insertion of magnetic fields into the plasma region. In this paper, the impact of the magnetic field on plasma properties is parameterized as a function of slot configuration. The magnetic field orientation and the magnitude of magnetic field are varied in a computational study in which the source is modeled as a two-dimensional axisymmetric quasineutral plasma. This work employs a finite element model simulation. The magnitude of magnetic fields considered is 50 Gauss maximum with a microwave power of 3000 W at a pressure of 20 mTorr. 20 mTorr is chosen as this is a condition where diffusion effects are challenging to counteract. The study showed that there are specific conditions for slot configuration and magnetic field that improve the plasma controllability and some that do not. Plasma property modulation is most effective when the plasma source region is placed at large radius with axial magnetic fields. There are synergistic effects between the slot location and magnetic field that are important and placing large magnetic fields at the chamber edge alone does not result in improved uniformity. Electron cyclotron resonance (ECR) heating and the impact of pulsing the magnetic fields are presented. ECR heating is not important for the conditions relevant to this paper and pulsing is shown to have benefit.