Abstract
In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analytical profiles are considered. The impact of the doping profile on the threshold voltage and on the ratio Ion/Ioff at different doping levels of the channel is also considered. To consider the self-heating effect the thermodynamic transport model in TCAD Sentaurus software is used for simulation. The results of simulation show that self-heating effect, threshold voltage, and Ion/Ioff ratio considerably depend on the doping profile in source and drain areas.
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