Comparison of silicon-on-insulator and Body-on-Insulator FinFET based digital circuits with consideration on self-heating effects

Abstract

In recent years FinFET emerges as a promising device to assure the desired performance in the sub-22 nm regime. Among various FinFETs, SOI FinFET shows suppressed leakage current and superior short channel effects. However, it suffers from increased self-heating effect (SHE) due to the adaptation of a low thermal conductivity buried silicon dioxide layer and a ultra thin fin body. Bulk FinFET, on the other hand, mitigates the heating issue at the cost of the leakage current. Body-on-Insulator (BOI) FinFET alleviates, to some extent, the aforementioned downsides of both SOI and bulk FinFET but with the increased fabrication complexity [1]. Here, we report extensive simulation of BOI and SOI FinFETs using technology computer aided design (TCAD) [2] and for the first time, present evaluation of BOI and SOI FinFET based digital circuits and demonstrate that in actuality SHE is comparable for both circuits under low voltage bias.