Abstract
In this study, a series connection system of interconnects and gates is studied. In the system, we focus on skin effect, resistive and dielectric losses in previous level interconnects and the impact of their variations on the fast current estimation and the lifetime calculation of the post level interconnects. The changes in cross-section dimensions of interconnects are used to represent their differences in resistances, dielectric losses and skin effect in actual circuits or to represent the process of Electro Migration (EM). Through the analysis of the voltage transfer function of interconnects, the different roles of skin effect, resistive and dielectric losses in signal attenuation for interconnects of various cross-sections are pointed out. The study shows that the input voltage waveforms of the post level interconnects will change if the cross-section sizes of the previous level interconnects vary. By means of showing the changing tendencies of current and lifetime estimation results affected by the cross-section dimensions of the previous interconnects, we indicate that the fast current and reliability estimation results will not be accurate enough if these effects are not included.
Highlights
The reliability of interconnects has become one of the major concerns in nano-technology today as the scaling of chip size
The cross-section of interconnects is downsizing, while the current intensity is not decreasing proportionally, which leads to increase of the current density and interconnects are vulnerable to Electro Migration (EM), which is the process of mass transport when metal ions and moving electrons interact with each other in high current density
The temperature on interconnect is influenced by JouleHeating effect (Banerjee and Mehrotra, 2001) which is caused by resistive power dissipation of high current density
Summary
The reliability of interconnects has become one of the major concerns in nano-technology today as the scaling of chip size. After passing through interconnect and gate, it becomes a distorted signal attenuated by skin effect, resistive and dielectric losses. If EM occurs on interconnect, its resistance and effective cross-section dimension will change, which will lead to the same results These situations of interconnect will cause variations in the output risetimes of gate, affect the current values in interconnect. The disparities of the dashed and the solid lines indicate that the impact of skin effect and dielectric losses on the transfer function of interconnect is evident. Since the cross-section dimension of interconnect in (a) is too small, skin effect is still not significant even at the frequency of 100 GHz and the gap of the solid and the dashed lines is mainly resulted from the dielectric losses. The transfer function H1(s) can be expressed as:
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