Abstract
We present a theoretical study on the gain and threshold current density of III-nitride quantum dot (QD) and quantum well (QW) lasers with a comprehensive theory model. It is found that at transparency condition the injection current density of QD lasers is about 120 times lower than QW lasers in III-nitrides, while in III-arsenide it is about 15 times. It means that using QDs in III-nitride lasers could be 8 times more efficient than in III-arsenide. This significant improvement in III-nitrides is due to their large effective-masses and the large asymmetry of effective-masses between valence bands and conduction bands. Our results reveal the advantages of using QD for low threshold laser applications in III-nitrides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
