Abstract
In this study, the charge storage characteristics of Pt–Ti/HfO2/TiN/SiON/n-Si capacitor are demonstrated for flash memory applications. It presents favorable performance with gate coupling ratio (GCR) of 0.68 and 0.71 for as-deposited and annealed SiON, respectively. The flash memory exhibits a noteworthy memory performance as well as retention time after post-deposition annealing of tunnel oxide (SiON). A memory window of ~ 11.2 V after post-deposition annealing and excellent data retention at room temperature under ± 10 V is also shown. The charge storage density also enhances after annealing which is associated with the large flat band voltage shift. Furthermore, enhanced program/erase speed is attributed to decreased barrier height of both electrons and holes and stronger interface against creation of Si dangling bonds. These results prove that the wary annealing of SiON layer is promising for the improvement of metal floating gate-based memory performance.
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