Abstract

The aim of this work is to evaluate the impact on low frequency noise performances due to pocket implantation. Low frequency noise measurements have been done on different gate lengths in a range of 0.04 to 10 μm and 10 μm for gate width. Different pocket implantations have been investigated: high pocket implantation, standard pocket implantation and no pocket implantation. All measurements have been done on 30 different dies on all a wafer. An unexpected degradation of low frequency noise has been observed for long gate length probably due to pocket implantation which created additional oxide traps density.

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