Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies

Abstract

An analytical model and analysis of the low frequency noise performance of ultrathin oxide MOSFETs are presented. The model includes the effects of gate tunneling leakage current, low frequency noise sources, and their cross correlation coefficient between the input and the output. The correlation coefficient is not negligible in the existence of direct tunneling current through the gate oxide, and has an impact on the overall noise performance at low frequencies. Based on the partition noise theory and BSIM4 gate leakage current model with the source–drain partition, the correlation coefficient is obtained from a physical and rigorous modeling of intrinsic noise sources. The calculated results are compared with correlation noise measurements and good agreement is observed. An analytical formulation of low frequency noise performance is newly derived using the frequency-dependent noise parameters P LF, R LF, and C LF. The noise performance parameters, such as minimum noise figure, optimum source resistance and reactance, are graphically presented to accurately predict the influence of the gate leakage current on the low frequency noise performance. From quantitative results simulated with typical device parameters, it is shown that the proposed model can be used for optimum design of ultrathin oxide MOS devices and circuits at low frequencies.