Abstract
This paper investigates the impact of piezo-phototronic effects on the power conversion efficiency of ZnMgO/Se heterojunction photovoltaic devices. Sputter-deposited ZnMgO thin film and photo-absorbing Se were employed as the n-type window layer and p-type layer, respectively, to form a photovoltaic device on a flexible polyethylene terephthalate film. The applied strain was varied, and the changes due to the applied strain were recorded. The open-circuit voltage (Voc) increased from 0.59 V to 0.75 V when the applied strain was increased from − 0.41–0.40% by varying the bending angle. It has been reported that piezoelectric polarization of ZnMgO can decrease conduction band offset (CBO) between the ZnMgO and Se layers.
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