Abstract
In this study, a PECVD porous SiOCH dielectric with k = 2.4 is integrated in a Cu single damascene architecture. The main issue investigated is the low k compatibility with different photo-resist ash chemistries as well as their effects on the properties of the dielectric after integration. Metal 1 test structures are characterized by TEM, EFTEM and by electrical measurements. Conduction mechanisms are studied from I( V) measurements for different strip conditions. Impacts of ash processes on leakage, integrated k value and TDDB are discussed. Oxygen-based ash chemistries were found to damage the physical and electrical properties of the material (lower barrier integrity, lower dielectric breakdown field, higher leakage) as well as the reliability of interconnect test structures (lower lifetimes) whereas nitrogen-based chemistries enhance these properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
