Abstract
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 106, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 104. IGO TFTs may act as photodetectors according to the results obtained for optical properties.
Highlights
Amorphous oxide semiconductor thin-film transistors (TFTs) have been widely applied to flat-panel displays, personal digital assistant computers, and smart phones [1]
TFTs of indium gallium oxide (IGO) TFTs was observed in sample B, which yielded a Vth of 1.1 V, S.S of 3.82 V/dec, field-effect was observed incm sample
We reported the fabrication of IGO TFTs with different deposition power of In2 O3 we reported the fabrication
Summary
Amorphous oxide semiconductor thin-film transistors (TFTs) have been widely applied to flat-panel displays, personal digital assistant computers, and smart phones [1] These transistors are attractive materials as they exhibit electrical characteristics that are superior to those of conventional amorphous silicon TFTs; these characteristics include high carrier mobility, high stability, transparency, and a low-temperature processing requirement [2,3]. Indium oxide (In2 O3 )-based binary compounds are excellent materials for TFT devices These materials are transparent and feature a wide bandgap (~3.2 eV), high electrical conductivity, and optical transparency owing to the native oxygen vacancies that act as donors and indium interstitials. The effects of oxygen vacancies on the characteristics of photodetectors were determined by analyzing thin-film properties using X-ray photoelectron spectroscopy (XPS)
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