Impact of oxygen on band structure at the Ni/GaN interface revealed by hard X-ray photoelectron spectroscopy

Hirotaka Mizushima,Shunsuke Yamashita,Yoshihiro Kudo,Rintaro Koda,Kazuhiro Hono,Tatsushi Hamaguchi,Yuta Inaba,Tadakatsu Ohkubo,Katsunori Yanashima,Ryoji Arai,Shigetaka Tomiya,Yudai Yamaguchi,Yuya Kanitani

doi:10.1063/5.0033165

Hirotaka Mizushima, Shunsuke Yamashita + Show 11 more

Open Access

https://doi.org/10.1063/5.0033165

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Abstract

To investigate the impact of oxygen on the band structure at the Ni/p-type GaN interface, the crystal structure and nanoscale impurity distributions were evaluated using transmission electron microscopy and three-dimensional atom probe (3DAP) analysis, respectively. These measurements revealed that the oxygen region existed approximately 5 nm from the GaN surface and that the oxygen concentration was equal to or higher than the Mg acceptor concentration. The band bending and photoelectron spectrum were then simulated using the Mg and oxygen concentration profiles obtained by 3DAP to consider the impact of the interfacial oxygen donors on the photoelectron spectrum measured using hard X-ray photoelectron spectroscopy (HAXPES). The precise band bending was then determined by fitting the simulated spectrum onto the experimental measurements. This showed that the oxygen donors at the interface modulated the band structure and decreased the energy barrier by at least 0.1 eV, which demonstrates the importance of considering the existence of oxygen at the interface. It is, therefore, essential to use techniques like 3DAP and HAXPES to evaluate both the nanoscale impurity distributions and the resulting band structure to fabricate higher-performance devices.

Highlights

A native oxide layer can be formed on GaN surfaces, which may affect the Fermi-level pinning that influences the conductivity between metal contacts with GaN
The precise band bending was determined by fitting the simulated spectrum onto the experimental measurements. This showed that the oxygen donors at the interface modulated the band structure and decreased the energy barrier by at least 0.1 eV, which demonstrates the importance of considering the existence of oxygen at the interface
The structure of Ni/p-type GaN (p-GaN) interfaces was investigated by scanning transmission electron microscopy (STEM)

Summary

Introduction

A native oxide layer can be formed on GaN surfaces, which may affect the Fermi-level pinning that influences the conductivity between metal contacts with GaN. To investigate the impact of oxygen on the band structure at the Ni/p-type GaN interface, the crystal structure and nanoscale impurity distributions were evaluated using transmission electron microscopy and three-dimensional atom probe (3DAP) analysis, respectively.

Results

Conclusion