Abstract
Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the leakage current on the device operation can cause a serious reliability problem. In this paper, we have investigated the effect of nonuniform gate oxide thickness on the current as well as the high-frequency performance of TFETs. The focus of this paper is to demonstrate how to reduce effects of gate leakage current by using a taper shape gate oxide. The IV and CV characteristics are investigated regarding different nonuniform gate oxide graded shapes. Further, the ON and OFF currents and SS, as figures of merit for low standby power application, have been analyzed. Apart from this, the RF figure of merit in terms of unit-gain cutoff frequency (fT) is investigated.
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