Abstract

AbstractIn this paper, a comparative analysis of two different junctionless architectures viz junctionless gate-all-around (JL-GAA) and junctionless triple gate (JLTG) is presented incorporating the advantages of hetero-high-κ gate oxides and high mobility Silicon–Germanium material. On the basis of various electrostatic, analog and RF figures of merit (FOMs) like on/off ratio, leakage current, drain-induced barrier lowering (DIBL), gain trans-conductance frequency product (GTFP) etc., JL-GAA is found superior than JLTG.KeywordsJLTGJL-GAASiGeSCEsAnalog and RF FOMs

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