Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT

Abstract

An experimental examination of AlGaN/GaN/SiC HEMT multi-bias behaviour is presented in this paper to add to the enormous amount of device performance data in varied operating bias conditions. The study investigates various device parameters, including electrostatic performance, DC figures of merit, RF figures of merit and non-linear parameters under multi-bias conditions. The electrostatic performance is evaluated by analyzing the Ids-Vds transfer curves, ON-state and OFF-state currents, subthreshold slope and subthreshold swing. The output current, transconductance (gm), 2nd-and 3rd-order transconductance (gm2, and gm3) behaviour of the GaN device over multi-bias indicates a significant potential. The transconductance-reliant non-linear performance is assessed by analyzing voltage intercept points (VIP2 and VIP3), 3rd-order intercept point (IIP3), 1-dB compression point (1-dB CP), 3rd-order intermodulation distortion (IMD3), and total harmonic distortion (THD). In the case of RF parameters, the maximum ft and fmax values are 41 GHz and 125.7 GHz, respectively, and GBW up to 640 GHz was achieved. The relevant parameters, specifically the gain frequency product (GFP), transconductance frequency product (TFP), and the gain transconductance frequency product (GTFP), demonstrated remarkable results with maximum values of 683 GHz, 380.1 GHz/V, and 9827.7 GHz/V, respectively. These findings provide some valuable perceptions which would facilitate the fabrication of cutting-edge technologies for present and future applications.