Abstract
GaMnN thin films were fabricated by using pulsed laser deposition followed by annealing. In our experiments, the impact of the background nitrogen pressure on the crystal quality, morphology and the ferromagnetism of the GaMnN thin films were studied systematically. It is found that the samples deposited at 0.75 Pa have the best crystal quality. All the annealed samples showed ferromagnetic behavior, and the Curie temperature was estimated up to 340 K. We found the magnetization of our samples changes depending on the concentration of Mn3+ ions, and the origin of the room temperature ferromagnetism of our samples can be explained by bound magnetic polaron theory. The nitrogen vacancies may cause the ferromagnetism to be weakened.
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