Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition

Abstract

The effects of oxygen and nitrogen pressure on the structural and electrical properties of crystalline β-Ga2O3 films grown by pulsed laser deposition were investigated. We found that varying the oxygen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa changed the resistivity from the order of 102–103 Ω cm. Adjusting the nitrogen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa increased the resistivity from the order of 104–105 Ω cm. Oxygen and nitrogen pressures in the range from 1 × 10−4 Pa to 1 × 10−1 Pa had no obvious influence on the crystal quality, surface morphology, or transmittance of the β-Ga2O3 films grown at 500°C on sapphire substrates. All the films showed a (− 201) oriented monoclinic structure with smooth surfaces and high transmittance. The obtained β-Ga2O3 films have potential for applications in thin film resistors for monolithic microwave integrated circuits.