Abstract
In our previous study, using NF 3 annealed poly-Si to improve gate oxide integrity for Co–silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO 2 and Co–salicide. In this study, F and/or N will be implanted into poly-Si with/without Co–salicide process, to identify the interaction of N and F in the SiO 2 and Co–salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co–silicide process.
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