Impact of new material technologies on device design

Abstract

For some time it has been acknowledged that transistors fabricated from III–V semiconductor materials have advantages over those made of silicon. The high frequency performance of both field effect and bipolar transistors, fabricated from III–V semiconductor alloys, has increased until now the unity gain cutoff frequency for ‘state of the art’ designs now exceeds 100GHz. However, in many instances the application of these devices remains a research topic.