Impact of NBTI on the performance of 35nm CMOS digital circuits

Abstract

The negative bias temperature instability (NBTI) of p-MOSFET has the greatest impact on the long term reliability of nano-scale devices and circuits. For several decades, NBTI research has been focused at the device physics level or on the characterization methodology, with little attention paid to the impact of NBTI on the performance of basic digital circuits. This paper discusses the effects of NBTI on 35 nm technology CMOS inverters and SRAM. The delay degradation and power dissipation of the inverters, as well as the static noise margin degradation of the SRAM are analysed. Moreover, the effects of power supply voltage on inverters and the cell ratio on SRAM under NBTI are also discussed.