Abstract
This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.
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