Abstract
In a metal-oxide-semiconductor (MOS) the leakage current can be a significant contributor to heat dissipation, resulting in higher power consumption. This paper presents a synthesis of leakage current effects on MOSFET performances, and its relation with charge trapping in the interface, after RF life-tests of operational reliability pulsed bench for radar applications in S-band. It is important to understand the degradation mechanism effects caused by the increase leakage current and by relationship on drifts of electrical parameters such as threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ), drain-source breakdown voltage (V(BR)DSS) and feedback capacitance (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rss</sub> ). The tracking of set parameters shows that only Hot Carrier Injection (HCI) phenomenon appears. It is the main cause for device degradation leading to the interface state generation (traps), which results in a build-up of negative charge at Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface. More interface states are created due to a located maximum impact ionization rate at the gate edge. To understanding the physical mechanisms in device inside, a numerical model (Silvaco-Atlas) was used to confirm degradation phenomena. From experimental results, the problem of leakage current should be taken into consideration in the design process of the power RF MOS devices. And can be used as useful tool to investigate reliability in MOSFET.
Published Version
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