IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS

Abstract

Listen

Translate article

Device parameter fluctuations, which arise from both the stochastic nature of the manufacturing process and more fundamentally from the intrinsic discreteness of charge and matter, are a dominant source of device mismatch in nano-CMOS devices, and a bottleneck to the future yield and performance of circuits and systems. The impact of such parameter fluctuations is investigated for circuits — with a specific exemplar of 6-T SRAM — whose devices scale from 35 nm gate length. We posit a change in design approach to include the use of statistical compact models as a starting point for the development of cell libraries containing fluctuation information necessary for design under the constraints of parameter fluctuations, and novel Technology Aided System Design tools.