Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

Abstract

An ‘atomistic’ circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the ‘real’ doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices. We conclude that SRAM may not gain all the benefits of future bulk CMOS scaling, and new device architectures are needed to scale SRAM down to future technology node.