Abstract
Here, we examine the impact of various trap charges on the baseline and NC PGPFET (negative capacitance partial ground plane FET) by applying localized charges (donor/acceptor) at the semiconductor/insulator interface. Examining different parameters has revealed that donor traps enhance device characteristics while acceptor traps reduce device performance. Therefore NC effect is generated by introducing a ferroelectric material in the gate stack that enhances the device performance by the voltage amplification process. Doped HfO2 is taken as the ferroelectric material because of its high dielectric capacitance and reliable polarization rate. Along with DC, RF/Analog factors such as trans-conductance (gm), output conductance (gds), trans-conductance generation factor (TGF), cut-off frequency (ft), trans-conductance frequency product (TFP) have been examined for the potential use of NCFET for RF applications. Additionally, linearity parameters like gm2, gm3, VIP2, VIP3 and intermodulation distortion (IMD3) is also compared for both traps. Due to its improved performance, NC PGPFET is appropriate for low-voltage analog/RF applications.
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