Abstract
We have previously reported spontanous formation of InGaN/GaN superlattice structure on nominal InGaN films grown by plasma-assisted molecular beam epitaxy (PAMBE). In this work, we report on the impact of In flux on the formation and periodicity of self-assembled In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> N/In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</inf> N superlattice structure (SASL). We show that the thickness and In composition in the InGaN layer varies by changing the In flux. These films were stucturally characterized by X-ray diffraction and simulated by globalfit software to get the thickness and In composition. The superlattice structures were confimred by scanning transmission electron microscopy and the thickness of InGaN layer and In composition were determined by energy dispersive X-ray spectroscopy. This work can provide a method for using the SASL with better control for their optoelectronics application.
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