Abstract
Abstract Bulk Ge4Se60Te30In6 chalcogenide glass was synthesized by melt quenching process. Thin films of prepared glassy alloy were deposited onto highly cleaned glass substrate using thermal evaporation technique. In the present work the effect of annealing temperature on the structural and optical behavior of Ge4Se60Te30In6 thin film is investigated by DSC, XRD and UV-Vis spectroscopy. Optical transmittance with wavelength was recorded, for as-prepared and annealed films by a double beam spectrophotometer in the wavelength span 300 to 1000 nm. The optical constants like α, k and Eg were calculated as a function of annealing temperature. The optical transition was found to be allowed direct transition. The decrease of optical band gap with increasing the annealing temperature from 373K to 413 K was explained by Mott and Davis model. The decrease of optical bandgap with increase of annealing temperature were explained by structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.
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