Abstract
This study examines the extraction of small-signal equivalent circuit parameters, linearity and intermodulation metrics, and capacitance–voltage characteristics for both AlGaN and GaN channel HEMTs. Compared to GaN channel HEMTs, AlGaN channel HEMTs have better linearity and intermodulation distortion. In the instance of AlGaN channel HEMTs, the device parasitics are decreased. Additionally, the effect of graded AlGaN buffer layer thickness on breakdown characteristics and linearity is examined. For breakdown characteristics, the 200 nm-graded AlGaN buffer layer thickness yields superior results with VBOff 157 V for a thickness of 200 nm (147 V in the case of 500 nm). At 200 nm thickness, the linearity and intermodulation distortion FOMs are also reasonably good, and the remaining device properties are essentially unchanged. Hence, the graded AlGaN buffer thickness can be reduced for high-voltage applications. For higher-voltage applications, the graded AlGaN buffer thickness can, therefore, be decreased.
Published Version
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